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dc.contributor.editorRinaldi, Niccolò
dc.contributor.editorSchröter, Michael
dc.date.accessioned2025-03-07T21:05:24Z
dc.date.available2025-03-07T21:05:24Z
dc.date.issued2018
dc.date.submitted2022-11-28T16:04:16Z
dc.identifierONIX_20221128_9781000794403_34
dc.identifierhttps://library.oapen.org/handle/20.500.12657/59750
dc.identifier.urihttps://doab-dev.siscern.org/handle/20.500.12854/166801
dc.description.abstractThe semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems.
dc.languageEnglish
dc.rightsopen access
dc.subject.classificationthema EDItEUR::P Mathematics and Science::PH Physics::PHD Classical mechanics::PHDY Energy
dc.subject.otherEnergy
dc.titleSilicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications
dc.typebook
oapen.identifier.doi10.1201/9781003339519
oapen.relation.isPublishedByfa69b019-f4ee-4979-8d42-c6b6c476b5f0
oapen.relation.isFundedByEuropean Commission
oapen.relation.isFundedBy3983007a-5726-4f1e-b9df-3fbc771f2916
oapen.relation.isbn9781000794403
oapen.relation.isbn9788793519619
oapen.relation.isbn9781003339519
oapen.collectionEU collection
oapen.imprintRiver Publishers
oapen.pages376
oapen.grant.number[...]
peerreview.review.typeProposal
peerreview.anonymitySingle-anonymised
peerreview.reviewer.typeInternal editor
peerreview.reviewer.typeExternal peer reviewer
peerreview.review.stagePre-publication
peerreview.open.reviewNo
peerreview.publish.responsibilityPublisher
peerreview.idbc80075c-96cc-4740-a9f3-a234bc2598f1
dc.relationisFundedBy3983007a-5726-4f1e-b9df-3fbc771f2916
peerreview.titleProposal review


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