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dc.contributor.authorKühn, Jutta*
dc.date.accessioned2021-02-11T08:02:16Z
dc.date.available2021-02-11T08:02:16Z
dc.date.issued2011*
dc.date.submitted2019-07-30 20:02:02*
dc.identifier35656*
dc.identifier.issn18684696*
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/40629
dc.description.abstractThis work has arisen out of the strong demand for a superior power-added efficiency (PAE) of AlGaN/GaN high electron mobility transistor (HEMT) high-power amplifiers (HPAs) that are part of any advanced wireless multifunctional RF-system with limited prime energy. Different concepts and approaches on device and design level for PAE improvements are analyzed, e.g. structural and layout changes of the GaN transistor and advanced circuit design techniques for PAE improvements of GaN HEMT HPAs.*
dc.languageEnglish*
dc.relation.ispartofseriesKarlsruher Forschungsberichte aus dem Institut für Hochfrequenztechnik und Elektronik*
dc.subjectT1-995*
dc.subject.classificationthema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issuesen_US
dc.subject.otherMMIC design*
dc.subject.otherpower amplifier*
dc.subject.otherAlGaN/GaN HEMT*
dc.subject.otherX-band*
dc.subject.otherpower-added efficiency*
dc.titleAlGaN/GaN-HEMT power amplifiers with optimized power-added efficiency for X-band applications*
dc.typebook
oapen.identifier.doi10.5445/KSP/1000021579*
oapen.relation.isPublishedBy68fffc18-8f7b-44fa-ac7e-0b7d7d979bd2*
oapen.relation.isbn9783866446151*
oapen.pagesXI, 230 p.*
oapen.volume62*
peerreview.review.typeFull text
peerreview.anonymityAll identities known
peerreview.reviewer.typeEditorial board member
peerreview.reviewer.typeExternal peer reviewer
peerreview.review.stagePre-publication
peerreview.open.reviewNo
peerreview.publish.responsibilityBooks or series editor
peerreview.id51a542ec-eaeb-47c2-861d-6022e981a97a
peerreview.titleDissertations in Series (Dissertationen in Schriftenreihe)


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