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dc.contributor.authorLi, Qiliang*
dc.contributor.authorZhu, Hao*
dc.date.accessioned2021-02-11T20:32:56Z
dc.date.available2021-02-11T20:32:56Z
dc.date.issued2019*
dc.date.submitted2019-08-28 11:21:27*
dc.identifier35903*
dc.identifier.urihttps://directory.doabooks.org/handle/20.500.12854/54256
dc.description.abstractAs CMOS scaling is approaching the fundamental physical limits, a wide range of new nanoelectronic materials and devices have been proposed and explored to extend and/or replace the current electronic devices and circuits so as to maintain progress with respect to speed and integration density. The major limitations, including low carrier mobility, degraded subthreshold slope, and heat dissipation, have become more challenging to address as the size of silicon-based metal oxide semiconductor field effect transistors (MOSFETs) has decreased to nanometers, while device integration density has increased. This book aims to present technical approaches that address the need for new nanoelectronic materials and devices. The focus is on new concepts and knowledge in nanoscience and nanotechnology for applications in logic, memory, sensors, photonics, and renewable energy. This research on nanoelectronic materials and devices will be instructive in finding solutions to address the challenges of current electronics in switching speed, power consumption, and heat dissipation and will be of great interest to academic society and the industry.*
dc.languageEnglish*
dc.subjectTA1-2040*
dc.subjectT1-995*
dc.subject.classificationthema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TB Technology: general issues::TBX History of engineering and technologyen_US
dc.subject.otherquantum mechanical*
dc.subject.othern/a*
dc.subject.otherneuromorphic computation*
dc.subject.otheroff-current (Ioff)*
dc.subject.otherdouble-gate tunnel field-effect-transistor*
dc.subject.othertopological insulator*
dc.subject.otherback current blocking layer (BCBL)*
dc.subject.otherCMOS power amplifier IC*
dc.subject.otherinformation integration*
dc.subject.otherdistributed Bragg*
dc.subject.otherspike-timing-dependent plasticity*
dc.subject.otherelectron affinity*
dc.subject.otherenhancement-mode*
dc.subject.othercurrent collapse*
dc.subject.othergallium nitride (GaN)*
dc.subject.otherband-to-band tunneling*
dc.subject.othervertical field-effect transistor (VFET)*
dc.subject.otherionic liquid*
dc.subject.otherluminescent centres*
dc.subject.otherthermal coupling*
dc.subject.othervision localization*
dc.subject.otherPC1D*
dc.subject.otherUAV*
dc.subject.otherZnO/Si*
dc.subject.otherdual-switching transistor*
dc.subject.othermemristor*
dc.subject.otherfield-effect transistor*
dc.subject.otherhigher order synchronization*
dc.subject.othershallow trench isolation (STI)*
dc.subject.othermemristive device*
dc.subject.otheron-current (Ion)*
dc.subject.otherlow voltage*
dc.subject.otherreflection transmision method*
dc.subject.otherdielectric layer*
dc.subject.othersource/drain (S/D)*
dc.subject.otherhigh efficiency*
dc.subject.othernanostructure synthesis*
dc.subject.otherInAlN/GaN heterostructure*
dc.subject.othersupercapacitor*
dc.subject.otherhigh-electron mobility transistor (HEMTs)*
dc.subject.otherheterojunction*
dc.subject.otherp-GaN*
dc.subject.otherrecessed channel array transistor (RCAT)*
dc.subject.othergate field effect*
dc.subject.othercharge injection*
dc.subject.othersaddle FinFET (S-FinFET)*
dc.subject.otherL-shaped tunnel field-effect-transistor*
dc.subject.otherconductivity*
dc.subject.otherenergy storage*
dc.subject.otherhierarchical*
dc.subject.otherPECVD*
dc.subject.othersample grating*
dc.subject.otherMISHEMT*
dc.subject.otherbistability*
dc.subject.otherthreshold voltage (VTH)*
dc.subject.otherbandgap tuning*
dc.subject.otheroscillatory neural networks*
dc.subject.otherUV irradiation*
dc.subject.otherMott transition*
dc.subject.otherthird harmonic tuning*
dc.subject.othertopological magnetoelectric effect*
dc.subject.othercross-gain modulation*
dc.subject.other2D material*
dc.subject.othersolar cells*
dc.subject.othersilicon on insulator (SOI)*
dc.subject.otherGreen’s function*
dc.subject.otheroptoelectronic devices*
dc.subject.othersemiconductor optical amplifier*
dc.subject.otherZnO films*
dc.subject.othergraphene*
dc.subject.otherAlGaN/GaN*
dc.subject.otherpolarization effect*
dc.subject.othertwo-photon process*
dc.subject.otherconductive atomic force microscopy (cAFM)*
dc.subject.other2DEG density*
dc.subject.othervanadium dioxide*
dc.subject.otherinterface traps*
dc.subject.otherpotential drop width (PDW)*
dc.subject.otherpattern recognition*
dc.subject.otherdrain-induced barrier lowering (DIBL)*
dc.subject.otheratomic layer deposition (ALD)*
dc.subject.othernormally off power devices*
dc.subject.othergate-induced drain leakage (GIDL)*
dc.subject.otherinsulator–metal transition (IMT)*
dc.subject.otherzinc oxide*
dc.subject.othersynaptic device*
dc.subject.othersubthreshold slope (SS)*
dc.subject.otherlanding*
dc.subject.othersilicon*
dc.subject.othercorner-effect*
dc.subject.otherconditioned reflex*
dc.subject.otherquantum dot*
dc.subject.othergallium nitride*
dc.subject.otherbismuth ions*
dc.subject.otherconduction band offset*
dc.subject.othervariational form*
dc.titleNanoelectronic Materials, Devices and Modeling*
dc.typebook
oapen.identifier.doi10.3390/books978-3-03921-226-2*
oapen.relation.isPublishedBy46cabcaa-dd94-4bfe-87b4-55023c1b36d0*
oapen.relation.isbn9783039212255*
oapen.relation.isbn9783039212262*
oapen.pages242*
oapen.edition1st*


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