Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications
| dc.contributor.editor | Rinaldi, Niccolò | |
| dc.contributor.editor | Schröter, Michael | |
| dc.date.accessioned | 2022-11-29T04:02:37Z | |
| dc.date.available | 2022-11-29T04:02:37Z | |
| dc.date.issued | 2018 | |
| dc.date.submitted | 2022-11-28T16:04:16Z | |
| dc.identifier | ONIX_20221128_9781000794403_34 | |
| dc.identifier | https://library.oapen.org/handle/20.500.12657/59750 | |
| dc.identifier.uri | https://directory.doabooks.org/handle/20.500.12854/94299 | |
| dc.description.abstract | The semiconductor industry is a fundamental building block of the new economy, there is no area of modern life untouched by the progress of nanoelectronics. The electronic chip is becomingan ever-increasing portion of system solutions, starting initially from less than 5% in the 1970 microcomputer era, to more than 60% of the final cost of a mobile telephone, 50% of the price of a personal computer (representing nearly 100% of the functionalities) and 30% of the price of a monitor in the early 2000’s.Interest in utilizing the (sub-)mm-wave frequency spectrum for commercial and research applications has also been steadily increasing. Such applications, which constitute a diverse but sizeable future market, span a large variety of areas such as health, material science, mass transit, industrial automation, communications, and space exploration.Silicon-Germanium Heterojunction Bipolar Transistors for mm-Wave Systems Technology, Modeling and Circuit Applications provides an overview of results of the DOTSEVEN EU research project, and as such focusses on key material developments for mm-Wave Device Technology. It starts with the motivation at the beginning of the project and a summary of its major achievements. The subsequent chapters provide a detailed description of the obtained research results in the various areas of process development, device simulation, compact device modeling, experimental characterization, reliability, (sub-)mm-wave circuit design and systems. | |
| dc.language | English | |
| dc.rights | open access | |
| dc.subject.other | Energy | |
| dc.subject.other | thema EDItEUR::P Mathematics and Science::PH Physics::PHD Classical mechanics::PHDY Energy | |
| dc.title | Silicon-Germanium Heterojunction Bipolar Transistors for Mm-wave Systems Technology, Modeling and Circuit Applications | |
| dc.type | book | |
| oapen.identifier.doi | 10.1201/9781003339519 | |
| oapen.relation.isPublishedBy | fa69b019-f4ee-4979-8d42-c6b6c476b5f0 | |
| oapen.relation.isFundedBy | European Commission | |
| oapen.relation.isFundedBy | 3983007a-5726-4f1e-b9df-3fbc771f2916 | |
| oapen.relation.isbn | 9781000794403 | |
| oapen.relation.isbn | 9788793519619 | |
| oapen.relation.isbn | 9781003339519 | |
| oapen.imprint | River Publishers | |
| oapen.pages | 376 | |
| oapen.grant.number | [...] | |
| dc.relationisFundedBy | 3983007a-5726-4f1e-b9df-3fbc771f2916 |
Fichier(s) constituant ce document
| Fichiers | Taille | Format | Vue |
|---|---|---|---|
|
Il n'y a pas de fichiers associés à ce document. |
|||

