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            Elementary Semiconductor Device Physics

            Understanding Energy Band Formation Using Circuit Theory

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            Auteur
            Masu, Kazuya
            Amakawa, Shuhei
            Language
            English
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            Résumé
            This book by two leading experts on integrated circuit design adopts an untraditional approach to introducing semiconductor devices to beginners. The authors use circuit theory to provide a digestible explanation of energy band theory and understanding of energy band diagrams. After briefly summarizing the basics of semiconductors, the authors describe semiconductor devices from a circuit theoretic point of view, making the book especially suitable for circuit design students and engineers. Further to the emphasis on the circuit perspective, the book then uses circuit theory to introduce readers to the famously indigestible “energy bands” of crystalline solids. Additionally, the book explains how to read physics from “energy band diagrams” of semiconductor devices in great detail. The key to appreciating the real power of energy band diagrams is shown to lie in the understanding of the concept of the “quasi-Fermi levels,” introduced in 1949 by William Shockley but remaining elusive to date and therefore often omitted from energy band diagrams. To rectify this, some of the energy band diagrams presented in this book, complete with quasi-Fermi levels, were drawn using a device simulator (a.k.a. technology computer-aided design; TCAD), offering quantitative information about device physics. The book could, therefore, also serve as a hands-on course text in TCAD-drawn band diagram reading. Because no prior exposure to quantum mechanics is required and the book does not attempt to teach it, this book is ideal for students in various disciplines who may or may not be specializing in semiconductor devices. The numerous practical examples of reading TCAD-based energy-band diagrams are also invaluable to practicing semiconductor device engineers.
            URI
            https://doab-dev.siscern.org/handle/20.500.12854/191513
            Keywords
            semiconductors;p-n junction;MOS transistors;quasi-fermi levels;carrier dynamics;semiconductor device; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TJ Electronics and communications engineering::TJF Electronics engineering::TJFD Electronic devices and materials; thema EDItEUR::T Technology, Engineering, Agriculture, Industrial processes::TH Energy technology and engineering::THR Electrical engineering; thema EDItEUR::P Mathematics and Science::PH Physics::PHF Materials / States of matter::PHFC Condensed matter physics (liquid state and solid state physics)
            DOI
            10.1201/9781003439417
            ISBN
            9781003439417, 9781040165454, 9781032574479
            Publisher
            Taylor & Francis
            Publisher website
            http://www.taylorandfrancis.com/
            Publication date and place
            2025
            Grantor
            • Tokyo Institute of Technology
            Imprint
            CRC Press
            Pages
            362
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              This project received funding from the European Union’s Horizon 2020 research and innovation programme under grant agreement No 871069.

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